GENERAL DESCRIPTION The AP50N06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. FEATURES

RDS(ON)≦ mΩ@VGS=10V

Super high density cell design for extremely low RDS(ON)

Exceptional on-resistance and maximum DC current capability APPLICATIONS

Power Management

DC/DC Converter

LCD TV & Monitor Display inverter

CCFL inverter

Secondary Synchronous Rectification